M. Ueki

发表

Growth of very-high-mobility AlGaSb /InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

Chun-Yen Chang, H. Yamaguchi, Yueh-Chin Lin, 2007 .

Epitaxial ferromagnetic MnAs thin films grown by molecular beam epitaxy on Si (001) substrates

Masaaki Tanaka, T. Nishinaga, K. Akeura, 1995 .

Imaging of Interference between Incident and Reflected Electron Waves at an InAs/GaSb Heterointerface by Low-Temperature Scanning Tunneling Spectroscopy

Y. Hirayama, S. Perraud, K. Kanisawa, 2006 .

Imaging of electron standing waves in InAs/GaSb superlattices by low‐temperature scanning tunneling spectroscopy

Y. Hirayama, S. Perraud, K. Kanisawa, 2006 .

In-plane anisotropic lasing characteristics of (110)-oriented GaInAsP quantum-well lasers

K. Oe, R. Bhat, M. Ueki, 2000 .

Low-threshold current densities of 1.5-μm wavelength (110) GaInAs(P) QW lasers along [001] direction

Rajaram Bhat, Kunishige Oe, Mineo Ueki, 2000, SPIE Photonics Taiwan.

Observation of subband standing waves in superlattices by low-temperature scanning tunneling spectroscopy

K. Suzuki, Y. Hirayama, S. Perraud, 2007 .

Imaging of subbands in InAs/GaSb double quantum wells by low-temperature scanning tunneling spectroscopy

Y. Hirayama, S. Perraud, K. Kanisawa, 2007 .