H. Watanabe

Raman scattering study on the effects of Ga ion implantation and subsequent thermal annealing for AlSb grown by molecular‐beam epitaxy

H. Asahi, M. Seta, S. Kim, 1993 .

Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interface

T. Iwamatsu, K. Kita, H. Amishiro, 2020, Japanese Journal of Applied Physics.

Direct observation and three dimensional structural analysis for threading mixed dislocation inducing current leakage in 4H–SiC IGBT

S. Tomohisa, N. Miura, Hiroshi Watanabe, 2019, Japanese Journal of Applied Physics.

Hall effect mobility in inversion layer of 4H-SiC MOSFETs with a thermally grown gate oxide

T. Iwamatsu, K. Kita, H. Amishiro, 2019, Japanese Journal of Applied Physics.

Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide

T. Iwamatsu, S. Yamakawa, K. Kita, 2019, Japanese Journal of Applied Physics.

Influence of recovery characteristics on switching behavior of SiC MOSFETs

Y. Nakao, T. Iwamatsu, S. Nakata, 2020, Japanese Journal of Applied Physics.

3.3 kV/1500 A power modules for the world’s first all-SiC traction inverter

Shuhei Nakata, Kenji Hamada, Masayuki Imaizumi, 2014 .

The Effect of Incomplete Ionization on SiC Devices during High Speed Switching

K. Kawahara, S. Nakata, S. Yamakawa, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Shallow and Deep Levels in Al+-Implanted p-Type 4H-SiC Measured by Thermal Admittance Spectroscopy

K. Kawahara, S. Nakata, S. Yamakawa, 2015 .

Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces

K. Kita, M. Noguchi, Tae-Hyeon Kil, 2021 .