M. Voelskow

发表

Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing

J. Pezoldt, E. Polychroniadis, W. Skorupa, 2008 .

Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers

P. Godignon, N. Mestres, G. Ferro, 2004 .

Properties of Ge nanocrystals formed by implantation of Ge+ ions into SiO2 films with subsequent annealing under hydrostatic pressure

A. Cherkov, W. Skorupa, K. Zhuravlev, 2003 .

Ion implantation-induced damage depth profile determination in SiC by means of RBS/C and bevelling technique

M. Posselt, W. Skorupa, D. Grambole, 2006 .

Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields

M. Voelskow, R. Yankov, R. Yankov, 2001 .

Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and subsequent annealing in CO atmosphere

B. Pécz, W. Skorupa, J. Stoemenos, 2009 .

Investigation of Al-implanted 6H– and 4H–SiC layers after fast heating rate annealings

M. Locatelli, L. Ottaviani, Y. Monteil, 2001 .