E. K. Evangelou

Study of stress-induced leakage current (SILC) in HfO2/Dy2O3 high-kappa gate stacks on germanium

Iosif Androulidakis, A. Dimoulas, M. S. Rahman, 2009, Microelectron. Reliab..

Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium

A. Dimoulas, E. K. Evangelou, S. F. Galata, 2007, Microelectron. Reliab..

Electrical characterization of the SiON/Si interface for applications on optical and MOS devices

E. K. Evangelou, Nikos Konofaos, 2003 .

Extraction of Schottky diode (and p−n junction) parameters from I–V characteristics

E. K. Evangelou, G. E. Giakoumakis, G. Giakoumakis, 1993 .

HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

Matty Caymax, A. Dimoulas, Michel Houssa, 2005 .

Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si

Wayne Cranton, E. K. Evangelou, Marco Fanciulli, 2003 .

Fermi-level pinning and charge neutrality level in germanium

E. K. Evangelou, Athanasios Dimoulas, A. Sotiropoulos, 2006 .

Properties and density of states of the interface between silicon and carbon films rich in sp3 bonds

Stergios Logothetidis, E. K. Evangelou, Nikos Konofaos, 1997 .