Arne Knauer

发表

3-W high-brightness tapered diode lasers at 735 nm based on tensile-strained GaAsP QWs

Bernd Sumpf, Hans Wenzel, Goetz Erbert, 2003, SPIE OPTO.

Design and realization of high-power DFB lasers

M. Weyers, Andreas Klehr, Bernd Sumpf, 2004, SPIE Optics East.

7.4 W continuous-wave output power of master oscillator power amplifier system at 1083 nm

G. Tränkle, Andreas Klehr, Bernd Sumpf, 2006 .

Optimization of GaAsP-QWs for high-power diode lasers at 800 nm

Klaus Vogel, R. Staske, Frank Bugge, 2000, Photonics West - Optoelectronic Materials and Devices.

Performance of 3-W/100-μm stripe diode laser at 950 and 810 nm

Frank Bugge, Hans Wenzel, Goetz Erbert, 2001, SPIE OPTO.

High-power broad-area 808 nm DFB lasers for pumping solid state lasers

G. Tränkle, Andreas Klehr, Frank Bugge, 2006, SPIE OPTO.

Fabricating and testing of Bragg gratings for 1060-nm α-DFB lasers

Katrin Paschke, Frank Bugge, Hans Wenzel, 2003, Photonics Fabrication Europe.

High-power ridge-wavequide broad-area lasers with a DFB resonator in the wavelength range 760- to 790-nm

Andreas Klehr, Frank Bugge, M. Braun, 2005, SPIE OPTO.

4.5 W hybrid integrated master-oscillator power-amplifier at 976 nm on micro-optical bench

Alexander Sahm, Katrin Paschke, Götz Erbert, 2009, OPTO.

A distributed feedback diode laser and its application as Raman light source

B. Sumpf, G. Erbert, Heinz-Detlef Kronfeldt, 2003, 2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666).

Optimization of InGaN/(In,Al,Ga)N based near UV‐LEDs by MQW strain balancing with in‐situ wafer bow sensor

M. Weyers, Sven Einfeldt, Michael Kneissl, 2009 .

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

Patrick Vogt, Zhihong Yang, Sven Einfeldt, 2010 .

Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate

Sven Einfeldt, Günther Tränkle, Michael Kneissl, 2011 .

Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire

Frank Brunner, Arne Knauer, T. Schenk, 2008 .

Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

Christoph Reich, Sven Einfeldt, Michael Kneissl, 2015 .

High-power and high temperature long-term stability of Al-free 950 nm laser structures on GaAs

R. Staske, Hans Wenzel, Götz Erbert, 1999 .

Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

Michael Kneissl, Ulrich T. Schwarz, Tim Wernicke, 2012 .

High-power 808 nm lasers with a super-large optical cavity

Bernd Sumpf, Hans Wenzel, Götz Erbert, 2005 .

Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes

M. Weyers, G. Tränkle, Sven Einfeldt, 2008 .

Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

Christoph Reich, Sven Einfeldt, Michael Kneissl, 2014 .

Influence of oxygen in AlGaAs-based laser structures with Al-Free active region on device properties

M. Weyers, Bernd Sumpf, Hans Wenzel, 2001 .

Crystalline perfection in GaInAsP/GaAs laser structures with GaInP or AlGaAs cladding layers

M. Weyers, Frank Bugge, Götz Erbert, 1997 .

High-brightness 735 nm tapered diode lasers

G. Tränkle, Bernd Sumpf, Hans Wenzel, 2002 .

High-power 783 nm distributed-feedback laser

M. Weyers, G. Erbert, G. Tränkle, 2004 .

Five-hundred-milliwatts distributed-feedback diode laser emitting at 940 nm

Andreas Klehr, Frank Bugge, Hans Wenzel, 2007 .

Investigation of the temperature dependent efficiency droop in UV LEDs

Sven Einfeldt, Michael Kneissl, Tim Wernicke, 2013 .

10W continuous-wave monolithically integrated master-oscillator power-amplifier

Katrin Paschke, G. Erbert, Olaf Brox, 2007 .

Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80%

Christoph Reich, Michael Kneissl, Tim Wernicke, 2013 .

High power pulse generation with a three section DBR laser with controllable saturable absorber

G. Erbert, G. Tränkle, Andreas Klehr, 1999 .

Growth optimization during III-nitride multiwafer MOVPE using real-time curvature, reflectance and true temperature measurements

Frank Brunner, M. Weyers, Veit Hoffmann, 2007 .

In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width

Patrick Vogt, Sven Einfeldt, Michael Kneissl, 2010 .

High-temperature growth of AlN in a production scale 11 × 2' MOVPE reactor

Michael Heuken, Frank Brunner, M. Weyers, 2008 .

High-voltage normally OFF GaN power transistors on SiC and Si substrates

Frank Brunner, Joachim Würfl, Arne Knauer, 2015, MRS Bulletin.

DBR lasers emitting at 1060 nm with first-order grating in InGaP waveguide layer

Andreas Klehr, Wolfgang Stolz, Arne Knauer, 1999 .

(Invited) High Voltage Normally-Off Transistors and Efficient Schottky Diodes based on GaN Technology

Frank Brunner, Arne Knauer, Markus Weyers, 2011 .

GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2013 .

Effect of the AIN nucleation layer growth on AlN material quality

Michael Heuken, Frank Brunner, Günther Tränkle, 2008 .

Degradation effects of the active region in UV-C light-emitting diodes

Moritz Brendel, Sven Einfeldt, Michael Kneissl, 2018 .

Device Breakdown and Dynamic effects in GaN Power Switching Devices: Dependencies on Material Properties and Device Design

Frank Brunner, Joachim Würfl, Arne Knauer, 2013 .

Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes

Patrick Vogt, Zhihong Yang, Sven Einfeldt, 2011 .

MOVPE growth of tunable DBR laser diode emitting at 1060 nm

M. Weyers, Andreas Klehr, Frank Bugge, 1998 .

High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm

M. Weyers, G. Tränkle, G. Erbert, 1999 .

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Frank Brunner, Joachim Wurfl, Arne Knauer, 2013, IEEE Transactions on Electron Devices.

70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates

Frank Brunner, Sibylle Dieckerhoff, Joachim Wurfl, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

High-power ridge-waveguide distributed-feedback lasers emitting at 860 nm

G. Erbert, G. Tränkle, Andreas Klehr, 2002 .

Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate

Sven Einfeldt, Michael Kneissl, Jens Rass, 2017 .

2W reliable operation of /spl lambda/=735 nm GaAsP/AlGaAs laser diodes

G. Tränkle, Bernd Sumpf, Hans Wenzel, 2001 .

Beam quality of high power 800 nm broad-area laser diodes with 1 and 2 μm large optical cavity structures

Hans Wenzel, Götz Erbert, Juergen Sebastian, 2001 .

Advances in group III-nitride-based deep UV light-emitting diode technology

M. Weyers, Sven Einfeldt, Michael Kneissl, 2010 .

High power 810 nm GaAsP/AlGaAs diode lasers with narrow beam divergence

R. Staske, Frank Bugge, Hans Wenzel, 2000 .