Eiichi Sano

发表

Design and fabrication of 2.4 GHz pre-biased rectifier

Masayuki Ikebe, Yutaro Otsu, Keishi Kubo, 2014 .

A 12-bit, 5.5-μW single-slope ADC using intermittent working TDC with multi-phase clock signals

Masayuki Ikebe, Eiichi Sano, Daisuke Uchida, 2014, 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS).

Prospects of InP-based IC technologies for 100-GBIT/S -class lightwave communications systems

Eiichi Sano, Takatomo Enoki, Tadao Ishibashi, 2001 .

High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors (Special Issue on High-Frequency/speed Devices in the 21st Century)

Eiichi Sano, Shoji Yamahata, Kenji Kurishima, 1999 .

Cmos device model for accurate circuit simulation application

Eiichi Sano, Tadakatsu Kimura, 1987 .

Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer

Tanemasa Asano, Taiichi Otsuji, Eiichi Sano, 2007, IEICE Trans. Electron..

A 0.6–4.5 GHz inductorless CMOS low noise amplifier with gyrator-C network

Masayuki Ikebe, Eiichi Sano, Yoshihito Amemiya, 2011, 2011 18th IEEE International Conference on Electronics, Circuits, and Systems.

W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs

Hideaki Matsuzaki, Eiichi Sano, Toshihiko Kosugi, 2006, IEICE Trans. Electron..

Lightwave-communication ICs for 10 Gbit/s and beyond

Eiichi Sano, Yuhki Imai, H. Ichino, 1995 .

Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)

Kimikazu Sano, Koichi Murata, Eiichi Sano, 1999 .

RF CMOS inductor shielded by a high-impedance surface

Eiichi Sano, Masamichi Akazawa, Koji Inafune, 2004, IEICE Electron. Express.

The Design of High Frequency True Single Phase Clocking Divider-by-3 Circuit

Masayuki Ikebe, Eiichi Sano, Junichi Motohisa, 2008 .

A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19-Gb/s decision circuit using a 0.2-/spl mu/m GaAs MESFET

Eiichi Sano, K. Murata, T. Otsuji, 1995 .

7-GHzInverted-F Antenna Monolithically Integrated withCMOS LNA

Masayuki Ikebe, Eiichi Sano, Daisuke Ueo, 2006 .

2.45 GHz high-gain electrically small antenna with composite right/left-handed ladder structure

Eiichi Sano, K. Takahagi, Y. Otsu, 2012 .

PRESENT STATUS AND FUTURE PROSPECTS OF HIGH-SPEED LIGHTWAVE ICS BASED ON INP

Kazuo Hagimoto, Eiichi Sano, Yasunobu Ishii, 1998 .

CMOS Common-Mode Filter with Gyrator-C Network

Masayuki Ikebe, Eiichi Sano, Daisuke Uchida, 2013 .

Accurate Clock Period Comparison for PLL Using Phase-Shift Direction Detector

Masayuki Ikebe, Eiichi Sano, Junichi Motohisa, 2011 .

Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers

Eiichi Sano, Tadao Ishibashi, Yutaka Matsuoka, 1995 .

Column parallel single-slope ADC with time to digital converter for CMOS imager

Masayuki Ikebe, Eiichi Sano, Junichi Motohisa, 2010, 2010 17th IEEE International Conference on Electronics, Circuits and Systems.

Low-power 1:16 DEMUX and one-chip CDR with 1:4 DEMUX using InP-InGaAs heterojunction bipolar transistors

Hideyuki Nosaka, Eiichi Sano, Takatomo Enoki, 2002 .

A Mixed Photonic/Electronic Circuit Simulation Including Transient Noise Sources

Eiichi Sano, Mikio Yoneyama, 1995 .

A 11b 5.1µW multi-slope ADC with a TDC using multi-phase clock signals

Masayuki Ikebe, Eiichi Sano, Kisu Kim, 2012, 2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012).

A 0.18µm 3GHz true single phase clocking divider-by-3 circuit

Masayuki Ikebe, Eiichi Sano, Junichi Motohisa, 2008 .

Low-power, small-size transmitter module with metamaterial antenna

Masayuki Ikebe, Yutaro Otsu, Keishi Kubo, 2015 .

C-12-32 Low-power CMOS logic circuits consisting of cascode structure

Keishi Kubo, Eiichi Sano, Yoshihito Amemiya, 2011 .

Low-power wake-up receiver with subthreshold CMOS circuits for wireless sensor networks

Masayuki Ikebe, Eiichi Sano, Yoshihito Amemiya, 2013 .

Differential photoconductive AND gate with low-temperature-grown InGaAs/InAlAs MQW MSM-PDs

Tadao Nagatsuma, Eiichi Sano, Mikio Yoneyama, 1995 .

InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond

Eiichi Sano, Yasuro Yamane, 1999 .

60-GHz, 9-µW wake-up receiver for short-range wireless communications

Masayuki Ikebe, Eiichi Sano, Toshiki Wada, 2013, 2013 Proceedings of the ESSCIRC (ESSCIRC).

40-Gb/s IC and packaging technologies for future lightwave communications

Eiichi Sano, Y. Imai, Yohtaro Umeda, 1997, Photonics West.

A chaotic wireless communication system based on collective synchronization among wireless nodes

Eiichi Sano, 2006, IEICE Electron. Express.

Low-Power Single-Slope Analog-to-Digital Converter with Intermittently Working Time-to-Digital Converter

Masayuki Ikebe, Eiichi Sano, Daisuke Uchida, 2015 .

Level-shift Circuit using Subthreshold-operated CMOS Operational Amplifiers

Tetsuya Asai, Eiichi Sano, Yoshihito Amemiya, 2009 .

A high‐speed BiCMOS gate array using bicmos gate circuit featured by darlington buffer

Tadao Nagatsuma, Eiichi Sano, Masao Suzuki, 1991 .

A 3.1-10.6 GHz RF CMOS circuits monolithically integrated with dipole antenna

Masayuki Ikebe, Eiichi Sano, Kazuhiro Takahagi, 2009, 2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009).

Offset cancellation with subthreshold-operated feedback circuit for fully differential amplifiers

Tetsuya Asai, Eiichi Sano, Yoshihito Amemiya, 2009, 2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009).

5.8 A 32×32-Pixel 0.9THz Imager with Pixel-Parallel 12b VCO-Based ADC in 0.18μm CMOS

Masayuki Ikebe, Eiichi Sano, Prasoon Ambalathankandy, 2019, 2019 IEEE International Solid- State Circuits Conference - (ISSCC).

Evaluation of Digitally Controlled PLL by Clock-Period Comparison

Masayuki Ikebe, Eiichi Sano, Yukinobu Makihara, 2007, IEICE Trans. Electron..

Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer

Taiichi Otsuji, Eiichi Sano, Mitsuhiro Hanabe, 2006, IEICE Trans. Electron..

Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer

Taiichi Otsuji, Eiichi Sano, Mitsuhiro Hanabe, 2006, IEICE Trans. Electron..

Ultrahigh-Speed Electronic Device Technologies for Lightwave Communication Systems

Eiichi Sano, 1999 .

Emission of Terahertz Radiation from Two-Dimensional Electron Systems in Semiconductor Nano- and Hetero-Structures

Tetsuya Suemitsu, Maki Suemitsu, Eiichi Sano, 2010, 35th International Conference on Infrared, Millimeter, and Terahertz Waves.

23 GHz bandwidth monolithic photoreceiver compatible with InP/InGaAs double-heterojunction bipolar transistor fabrication process

Eiichi Sano, Shoji Yamahata, M. Yoneyama, 1994 .

IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)

Eiichi Sano, Koichi Murata, Tadao Ishibashi, 1993 .

18.5 GHz bandwidth monolithic preamplifier using AlGaAs/GaAs ballistic collection transistors

Eiichi Sano, Y. Imai, T. Ishibashi, 1991 .

A simple drain current model for single-walled carbon nanotube network thin-film transistors

Eiichi Sano, Tomo Tanaka, E. Sano, 2014 .

Effect of a thin dielectric layer on terahertz transmission characteristics for metal hole arrays.

Eiichi Sano, Masamichi Akazawa, Masanori Hangyo, 2005, Optics letters.

Ultra-wideband silicon on-chip antennas with artificial dielectric layer

Masayuki Ikebe, Eiichi Sano, E. Sano, 2009, 2009 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS).

ULTRA-FAST OPTOELECTRONIC CIRCUIT USING RESONANT TUNNELLING DIODES AND UNI-TRAVELLING-CARRIER PHOTODIODE

Kimikazu Sano, Eiichi Sano, Naofumi Shimizu, 1998 .

Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Hideki Hasegawa, Eiichi Sano, Toshiki Makimoto, 2004 .

A Theoretical Comparison of Strained-Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors and Conventional Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using a Drift-Diffusion-Based Simulator

Eiichi Sano, 2003 .

80 GHz 4:1 frequency divider IC using nonself-aligned InP/InGaAs heterostructure bipolar transistors

Eiichi Sano, M. Ida, Hiroki Nakajima, 2000 .

Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems

Eiichi Sano, Mitsuhiro Hanabe, Y. M. Meziani, 2006 .

Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant emitter

Eiichi Sano, Mitsuhiro Hanabe, Y. M. Meziani, 2007 .

70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs

Eiichi Sano, Taiichi Otsuji, Y. Yamane, 2000 .

Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures

Tetsuya Suemitsu, Maki Suemitsu, Eiichi Sano, 2010 .

Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs double-heterojunction bipolar transistors

Kimikazu Sano, Eiichi Sano, Taiichi Otsuji, 1997 .

Optoelectronic clock recovery circuit using resonant tunnelling diode and uni-travelling-carrier photodiode

Kimikazu Sano, Eiichi Sano, Naofumi Shimizu, 1998 .

Highly strong and conductive carbon nanotube/cellulose composite paper

Eiichi Sano, Tomo Tanaka, E. Sano, 2010 .

Simulation of Carrier Transport across Heterojunctions Based on Drift-Diffusion Model Incorporating an Effective Potential : Semiconductors

Eiichi Sano, 2002 .

Fully monolithic integrated 43 Gbit/s clock and data recovery circuit in InP HEMT technology

Kimikazu Sano, Eiichi Sano, Koichi Murata, 2001 .

20-40-Gbit/s-CLASS GaAs MESFET DIGITAL ICs FOR FUTURE OPTICAL FIBER COMMUNICATIONS SYSTEMS

Kimikazu Sano, Koichi Narahara, Eiichi Sano, 1998 .

Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates

Eiichi Sano, Takashi Fukui, Junichi Motohisa, 2010 .

A differential photoconductive AND gate with Be-doped low-temperature-grown InGaAs-InAlAs MQW MSM-PD's

Tadao Nagatsuma, Eiichi Sano, Mikio Yoneyama, 1997 .

Generation of electrical short pulse using Schottky line periodically loaded with electronic switches

Koichi Narahara, Eiichi Sano, Taiichi Otsuji, 2006 .

Reliable Carbon-Doped InP/InGaAs HBTs Technology for Low-Power 40-GHz Static Frequency Divider

Eiichi Sano, M. Ida, Hiroki Nakajima, 1999 .

Graphene-based devices in terahertz science and technology

Hirokazu Fukidome, Maki Suemitsu, Eiichi Sano, 2012 .

A monolithically integrated photoreceiver compatible with InP/InGaAs HBT fabrication process

Eiichi Sano, Mikio Yoneyama, Hiroki Nakajima, 1994 .

Room temperature terahertz emission from grating coupled two-dimensional plasmons

Eiichi Sano, F. Teppe, W. Knap, 2008 .

An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode

Kimikazu Sano, Eiichi Sano, Naofumi Shimizu, 1999 .

A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation

Eiichi Sano, E. Sano, 1990 .

46 Gbit/s multiplexer and 40 Gbit/s demultiplexer IC modules using InAlAs/InGaAs/InP HEMTs

Eiichi Sano, Y. Imai, Yohtaro Umeda, 1996 .