Stanislav Voborný

Deposition and in-situ characterization of ultra-thin films

J. Čechal, T. Šikola, M. Kolíbal, 2004 .

A study of Ga layers on Si(1 0 0)-(2 × 1) by SR-PES: Influence of adsorbed water

J. Čechal, T. Šikola, J. Spousta, 2007 .

An ultra-low energy (30-200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum.

T. Šikola, M. Kolíbal, J. Spousta, 2011, The Review of scientific instruments.

Low temperature selective growth of GaN single crystals on pre-patterned Si substrates

T. Šikola, M. Konečný, J. Damková, 2019, Applied Surface Science.

Optimization of ion-atomic beam source for deposition of GaN ultrathin films.

T. Šikola, M. Kolíbal, J. Mach, 2014, The Review of scientific instruments.