M. Nagaoka

Characterization of reactively sputtered WNx film as a gate metal for self‐alignment GaAs metal–semiconductor field effect transistors

N. Uchitomi, N. Toyoda, T. Mizoguchi, 1986 .

A 28.3 mW PA-Closed Loop for Linearity and Efficiency Improvement Integrated in a $+$ 27.1 dBm WCDMA CMOS Power Amplifier

Takashi Yamaguchi, Shouhei Kousai, Kohei Onizuka, 2012, IEEE Journal of Solid-State Circuits.

Polar Antenna Impedance Detection and Tuning for Efficiency Improvement in a 3G/4G CMOS Power Amplifier

Junji Wadatsumi, Takashi Yamaguchi, Shouhei Kousai, 2014, IEEE Journal of Solid-State Circuits.

A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers

Masakatsu Mihara, Masami Nagaoka, Yoshiaki Kitaura, 1998 .

A novel cap-annealing technique using a WN/sub x/ film as a capsulant in the refractory gate self-aligned GaAs MESFET fabrication process

T. Nogami, M. Nagaoka, N. Iida, 1988 .