Chorng-Jung Lin

CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors

Meng-Fan Chang, Yen-Cheng Chiu, Wei-Chen Wei, 2019, Nature Electronics.

A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors

Meng-Fan Chang, Tzu-Hsiang Hsu, Ren-Shuo Liu, 2018, 2018 IEEE International Solid - State Circuits Conference - (ISSCC).

24.1 A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors

Meng-Fan Chang, Yen-Cheng Chiu, Wei-Chen Wei, 2019, 2019 IEEE International Solid- State Circuits Conference - (ISSCC).

A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time

Meng-Fan Chang, Shu-Meng Yang, Che-Wei Wu, 2012, 2012 IEEE International Solid-State Circuits Conference.

An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory

Meng-Fan Chang, Hiroyuki Yamauchi, Che-Wei Wu, 2013, IEEE Journal of Solid-State Circuits.

19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme

Meng-Fan Chang, Sreedhar Natarajan, Yu-Der Chih, 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).