H. Wu

Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices

A. Young, H. Jagannathan, J. Demarest, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

First Experimental Demonstration of MRAM Data Scrubbing: 80 Mb MRAM with 40 nm junctions for Last Level Cache Applications

D. Edelstein, R. Johnson, J. Slaughter, 2021, International Electron Devices Meeting.

A 14 nm Embedded STT-MRAM CMOS Technology

T. Standaert, D. Edelstein, R. Johnson, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Full Bottom Dielectric Isolation to Enable Stacked Nanosheet Transistor for Low Power and High Performance Applications

C. Park, N. Loubet, B. Haran, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).