H. Li

Gate-All-Around Strained Si0.4Ge0.6 Nanosheet PMOS on Strain Relaxed Buffer for High Performance Low Power Logic Application

J. Kavalieros, M. Metz, A. Murthy, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory

J. Kavalieros, M. Metz, M. Radosavljevic, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).