G. Oh

Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications

U-In Chung, In-Seok Yeo, In-Gyu Baek, 2006, 2009 Symposium on VLSI Technology.

High performance PRAM cell scalable to sub-20nm technology with below 4F2 cell size, extendable to DRAM applications

S.W. Nam, S.O. Park, J.T. Moon, 2010, 2010 Symposium on VLSI Technology.

PRAM Technology: from Non Volatility to High Performances

H. Horii, D. Ahn, C. Chung, 2010 .