K. Yew

High-temperature operation of self-assembled GaInNAs∕GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy

Soon Fatt Yoon, C. Liu, S. Yoon, 2006 .

Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

S. Yoon, B. Bo, T. Chih-Hang, 2004 .

Photoluminescence behaviour of GaInNAs quantum wells annealed at high temperature

W. Fan, W. Loke, T. K. Ng, 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

Z.Z. Sun, S. Yoon, C.Y. Liu, 2006, Nanoscale Research Letters.

Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy

S. Yoon, W. Loke, T. K. Ng, 2002 .

Growth characteristic and room-temperature lasing in GaInNAs quantum dots grown by solid-source molecular beam epitaxy

B. Bo, Z. Sun, K. Yew, 2004 .

Thickness effects on properties of GaInNAs quantum dots grown by molecular-beam epitaxy with nitrogen plasma source

Z. Sun, K. Yew, S. Yoon, 2003 .

InNAs and GaInNAs self-assembled quantum dots and lasers grown by solid source molecular beam epitaxy

B. Bo, Z. Sun, K. Yew, 2003 .