A. Papavasiliou

发表

Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulator

M. Urteaga, D. Antoniadis, Daehyun Kim, 2012 .

E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator

M. Urteaga, D. Kim, B. Brar, 2012, 2012 International Electron Devices Meeting.