Marco Fanciulli

发表

Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment

Elena Ferraro, Marco Fanciulli, Marco De Michielis, 2016, Quantum Inf. Process..

Properties of optically smooth diamond thin films produced by ECR-PACVD

Yi-Wu He, Theodore D. Moustakas, Marco Fanciulli, 1992, Optics & Photonics.

Ge: an enabling material for future high-performance CMOS technologies

Marc Heyns, Guy Brammertz, Matty Caymax, 2006 .

Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture

Elena Ferraro, Marco Fanciulli, Marco De Michielis, 2014, Quantum Inf. Process..

Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises

Elena Ferraro, Marco Fanciulli, Marco De Michielis, 2018, Quantum Inf. Process..

Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices' Variability?

Romain Wacquez, D. Kern, Marc Sanquer, 2011, FET.

Effective Hamiltonian for the hybrid double quantum dot qubit

Elena Ferraro, Marco Fanciulli, Marco De Michielis, 2013, Quantum Inf. Process..

Towards Oxide Electronics: a Roadmap

Pablo Sanchis, Julie Grollier, Jeremy Levy, 2019, Applied Surface Science.

Degradation kinetics of ultrathin HfO2 layers on Si(1 0 0) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM

Marco Fanciulli, A. Zenkevich, Yu. Lebedinskii, 2007, Microelectron. Reliab..

Principles of entertainment in inhabited television

Marco Fanciulli, 2008, AVI '08.

Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories

Daniele Ielmini, Dirk Wouters, F. Nardi, 2011 .

Modular Printed Circuit Boards for Broadband Characterization of Nanoelectronic Quantum Devices

Giorgio Ferrari, Alessandro Crippa, Marco Fanciulli, 2016, IEEE Transactions on Instrumentation and Measurement.

Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations

Elena Ferraro, Marco Fanciulli, Marco De Michielis, 2015, Quantum Inf. Process..

Hindering the Oxidation of Silicene with Non‐Reactive Encapsulation

Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, 2013 .

Stress Mapping in Silicon: Advantages of Using a Raman Spectrometer with a Single Dispersive Stage

David N. Batchelder, Marco Fanciulli, Emiliano Bonera, 2002 .

Spin-dependent recombination and single charge dynamics in silicon nanostructrures

Marco Fanciulli, Davide Rotta, Enrico Prati, 2014 .

Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation

Giuseppe Iannaccone, Gianluca Fiori, Marco Fanciulli, 2012 .

Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition

Marco Fanciulli, Shi-Jin Ding, Giovanna Scarel, 2008 .

Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling

Elena Ferraro, Marco Fanciulli, Marco De Michielis, 2014, 1404.2423.

Vibrational properties of epitaxial silicene layers on (111) Ag

Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, 2014 .

Characterization of transient currents in HfO2 capacitors in the short timescale

Andrea L. Lacaita, Christian Monzio Compagnoni, Alessandro S. Spinelli, 2006 .

Nondestructive diagnostics of high-κ dielectrics for advanced electronic devices

Marco Fanciulli, G. Pavia, Claudia Dallera, 2006 .

Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface

Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, 2014, Advanced materials.

Low-temperature atomic layer deposition of MgO thin films on Si

G. Tallarida, Marco Fanciulli, Sabina Spiga, 2013 .

Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells†

Jean-Luc Battaglia, Roberto Fallica, Andrea Gotti, 2009 .

Silicene field-effect transistors operating at room temperature.

Madan Dubey, Daniele Chiappe, Eugenio Cinquanta, 2015, Nature nanotechnology.

Ozone-Based Atomic Layer Deposition of Alumina from TMA: Growth, Morphology, and Reaction Mechanism

Simon D. Elliott, Marco Fanciulli, G. Pavia, 2006 .

Switching quantum transport in a three donors silicon fin-field effect transistor

Romain Wacquez, Maud Vinet, Marc Sanquer, 2011 .

Computation of the Stark effect in P impurity states in silicon

Marco Fanciulli, Alfonso Baldereschi, Alberto Debernardi, 2006 .

O3-based atomic layer deposition of hexagonal La2O3 films on Si"100… and Ge"100… substrates

L. Lamagna, Sylvie Schamm-Chardon, Marco Fanciulli, 2010 .

Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics

Giorgio Ferrari, Marco Fanciulli, Enrico Prati, 2010 .

Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition

Elena Cianci, Marco Fanciulli, Sabina Spiga, 2008 .

Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si

Wayne Cranton, E. K. Evangelou, Marco Fanciulli, 2003 .

Microwave irradiation effects on random telegraph signal in a MOSFET

Alessandro Calderoni, Giorgio Ferrari, Marco Sampietro, 2007 .

Giant random telegraph signal generated by single charge trapping in submicron n-metal-oxide-semiconductor field-effect transistors

Giorgio Ferrari, Marco Sampietro, Marco Fanciulli, 2008 .

Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications

Panagiotis Dimitrakis, Pascal Normand, Marco Fanciulli, 2004 .

Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices

Daniele Ielmini, F. Nardi, Elena Cianci, 2011 .

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Theodore D. Moustakas, R. J. Graham, Marco Fanciulli, 1991 .

Manipulation of localized charge states in n-MOSFETs with microwave irradiation

Marco Fanciulli, Enrico Prati, M. Fanciulli, 2008 .

Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO2 layers by low energy ion implantation

Panagiotis Dimitrakis, Pascal Normand, Marco Fanciulli, 2004 .

High-k Materials in Flash Memories

Gabriella Ghidini, R. Piagge, Marco Fanciulli, 2006 .

A compact T-shaped nanodevice for charge sensing of a tunable double quantum dot in scalable silicon technology

A. Crippa, Marco Fanciulli, Enrico Prati, 2016 .

Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications

L. Lamagna, Marco Fanciulli, C. Wiemer, 2012 .

Experimental study of gradual/abrupt dynamics of HfO2-based memristive devices

Alexantrou Serb, Themistoklis Prodromakis, Erika Covi, 2016 .

Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon

David N. Batchelder, Marco Fanciulli, Emiliano Bonera, 2002 .

In situ chemical and structural investigations of the oxidation of Ge(001) substrates by atomic oxygen

Alessandro Molle, Marco Fanciulli, G. Tallarida, 2006 .

Atomic layer deposited TiO2 for implantable brain-chip interfacing devices

Elena Cianci, Marco Fanciulli, Gabriele Seguini, 2012 .

Compact silicon double and triple dots realized with only two gates

Romain Wacquez, Maud Vinet, Marc Sanquer, 2009, 1005.5686.

Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy

Christian Teichert, Marco Fanciulli, Sabina Spiga, 2005 .

Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 “high k” and 2 metal deposition techniques

X. Garros, Laurent Vandroux, Pascal Besson, 2007 .

Ultraviolet optical near-fields of microspheres imprinted in phase change films

Jan Siegel, Marco Fanciulli, Mario Mosbacher, 2010 .

Local Electronic Properties of Corrugated Silicene Phases

Daniele Chiappe, Carlo Grazianetti, Alessandro Molle, 2012, Advanced materials.

Few electron limit of n-type metal oxide semiconductor single electron transistors

Romain Wacquez, Maud Vinet, Marc Sanquer, 2012, Nanotechnology.