J. Thomson

1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics

Florin Udrea, Gehan A. J. Amaratunga, S. Huang, 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

Web-based learning material for engineering analysis

James Wood, J. Thomson, 2002 .

The Challenges of Meeting Future Emissions Legislation with a Novel Low Precious Metal TWC

M. Keenan, J. Thomson, M. Keenan, 2004 .

Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

Florin Udrea, Gehan A. J. Amaratunga, William I. Milne, 1999 .

Silicon MOS controlled bipolar power switching devices using trench technology

Florin Udrea, Gehan A. J. Amaratunga, William I. Milne, 1999 .

Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices

Florin Udrea, Gehan A. J. Amaratunga, William I. Milne, 2001 .

Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process

Florin Udrea, Gehan A. J. Amaratunga, P. Waind, 2002 .

Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - experimental demonstration at 6.5 kV

Florin Udrea, Gehan A. J. Amaratunga, L. Coulbeck, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Development of the Next Generation of Insulated Gate Bipolar Tranistors based on Trench Technology

F. Udrea, J. Thomson, S.S.M. Chan, 1997, 27th European Solid-State Device Research Conference.

1.2 kV trench insulated gate bipolar transistors (IGBT's) with ultralow on-resistance

F. Udrea, T. Trajkovic, J. Thomson, 1999, IEEE Electron Device Letters.