S. Feng

A new InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a /spl delta/-doped wide-gap collector

W. Liu, W. Chang, J. Yan, 1998, 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140).

Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor

Wen-Chau Liu, Jing-Yuh Chen, H. Pan, 2000 .

Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors

J. Y. Chen, Wen-Chau Liu, H. Pan, 1999 .

InGaP/GaAs superlatticed resonant-tunneling transistor (SRTT)

W. Liu, J.Y. Chen, S. Cheng, 1999, Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).

Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51P doubleδ-doped heterojunction bipolar transistor

Wen-Chau Liu, Jing-Yuh Chen, H. Pan, 1999 .

On the multiple negative-differential-resistance (MNDR) InGaP-GaAs resonant tunneling bipolar transistors

L. Laih, Wen-Chau Liu, Kun-Wei Lin, 2001 .