Y. Ku

5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm2 SRAM cells for Mobile SoC and High Performance Computing Applications

Jun He, R. Chen, Geoffrey Yeap, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Complementary Field-Effect Transistor (CFET) Demonstration at 48nm Gate Pitch for Future Logic Technology Scaling

M. Cao, S. Jang, F. Lai, 2023, 2023 International Electron Devices Meeting (IEDM).