L. F. Albanese

An Analytical Model of the Forward I– V Characteristics of 4H-SiC p-i-n Diodes Valid for a Wide Range of Temperature and Current

F. G. Della Corte, S. Bellone, L. F. Albanese, 2011, IEEE Transactions on Power Electronics.

Limitations of the Open-Circuit Voltage Decay technique applied to 4H-SiC diodes

L. F. Albanese, G. Licciardo, S. Bellone, 2009, 2009 International Semiconductor Conference.

Characterization, modeling and simulation of 4H-SiC power diodes

L. F. Albanese, 2011 .

A Self-Consistent Model of the OCVD Behavior of Si and 4H-SiC $\hbox{p}^{+}\hbox{-n-n}^{+}$ Diodes

L. F. Albanese, S. Bellone, G. Licciardo, 2009, IEEE Transactions on Electron Devices.