X. Meng

发表

A broad infrared band in neutron‐irradiated silicon grown in hydrogen atmosphere

Ji-Wu Xiong, X. Meng, Yong-Chang Du, 1994 .

Positron annihilation investigation of defects in hydrogen containing FZ Si irradiated with high-dose reactor neutrons

X. Meng, 1995 .

Point defects in neutron-transmutation-doped Czochralski-grown Si studied by positron annihilation

M. Chardalas, S. Dedoussis, A. Liolios, 1991 .

The nature of a 2050–2150‐cm−1 infrared band in neutron‐transmutation‐doped silicon grown by the floating‐zone method in a hydrogen atmosphere

G. Qin, X. Meng, Yong-Chang Du, 1988 .

Effects of neutron irradiation on SiGe HBT and Si BJT devices

Pei-yi Chen, P. Tsien, Hong-wei Yang, 2003 .

Vacancy-type defects in large-dose neutron irradiated silicon containing hydrogen

X. Meng, 1994 .

Positron-trap centers in neutron-irradiated silicon containing hydrogen

R. Brusa, A. Zecca, X. Meng, 1995 .

Defects and their specific trapping rates in neutron-irradiated Si

X. Meng, 1994 .

Interaction of hydrogen with neutron-induced vacancy defects in Si

X. Meng, 1994 .

New Si–H infrared absorption peak corresponding to the hydrogen-defect shallow donors in silicon

Xiang-Ti Meng, Ji-Wu Xiong, G. Qin, 1995 .

Hydrogen-induced defects in neutron-irradiated silicon

X. Meng, 1994 .

Radiation-enhanced oxygen precipitation in neutron-transmutation-doped floating-zone silicon

X. Meng, 1992 .

Annealing behaviour of defects in neutron transmutation doped silicon

M. Chardalas, S. Dedoussis, A. Liolios, 1995 .

Annealing behavior of defects in neutron-transmutation-doped floating zone Si

X. Meng, 1994 .

Vacancy-Type Defects in Neutron-Irradiated Silicon

X. Meng, 1993 .

A positron annihilation study of defects in neutron transmutation‐doped float‐zone (Ar)‐Si

W. Puff, X. Meng, 1993 .

Gamma-ray radiation and annealing effects on colour CMOS image sensors

Z. You, X. Meng, A. Kang, 2003 .