François Martin

发表

Electro-optical properties of silicon nanocrystals

Alexandre Lacombe, Félix Beaudoin, François Martin, 2009, Photonics North.

0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters

O. Faynot, Denis Flandre, L. Picheta, 2002 .

Optical index profile of nonuniform depth-distributed silicon nanocrystals within SiO2

François Martin, C. Dahmoune, Guy G. Ross, 2009 .

HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

Olivier Renault, P. Besson, François Martin, 2002 .

Functionalization of Silica Nanoparticles and Native Silicon Oxide with Tailored Boron-Molecular Precursors for Efficient and Predictive p-Doping of Silicon

S. Kerdiles, Hervé Fontaine, François Martin, 2015 .

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Olivier Renault, François Martin, L. G. Gosset, 2002 .

Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

Thierry Baron, C. Busseret, Abdelkader Souifi, 2000 .

Modulation of the photoluminescence spectrum by depth selective excitation of an embedded Si-nc layer

François Martin, Guy G. Ross, G. Abel, 2004 .

Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices

Thierry Baron, François Martin, P. Mur, 2000 .

X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO2/Si interface

Olivier Renault, Helen Grampeix, François Martin, 2009 .

The effect of size and depth profile of Si-nc imbedded in a SiO2 layer on the photoluminescence spectra

Martin Chicoine, François Martin, Guy G. Ross, 2005 .