C. Nguyen

发表

High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

P. Janke, N. X. Nguyen, Chanh Nguyen, 2000 .

GaN/AlGaN high electron mobility transistors with f τ of 110 GHz

P. Janke, N. X. Nguyen, Chanh Nguyen, 2000 .

J. Moon, M. Micovic, P. Janke, 2000, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084).

Electrical characterisation of short gate In/sub 0.60/Ga/sub 0.40/As-In/sub 0.36/Al/sub 0.64/As/sub 0.84/Sb/sub 0.16/ high electron mobility transistors on InP substrate

M. Micovic, P. Janke, C. Nguyen, 2000 .