W.-H. Chang

Improved Monolayer MoS Performance With Two-Step Atomic Layer Deposited High- Dielectrics

Yu-Cheng Chang, Bo-Jhih Chou, W.-H. Chang, 2022, IEEE Journal of the Electron Devices Society.

Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics.

Y. Chiu, H. Hsu, Po-Hsun Ho, 2023, ACS nano.

Area-Selective Growth of Two-Dimensional Mono- And Bilayer WS2 for Field Effect Transistors

S. Liew, K. Wei, Chih-I Wu, 2023, ACS Materials Letters.

A new pre-etching pattern to determine 〈110〉 crystallographic orientation on both (100) and (110) silicon wafers

Yan-Pean Huang, W.-H. Chang, W.-H. Chang, 2005 .

Strain-Induced Sulfur Vacancies in Monolayer MoS2

T. Anthopoulos, M. Hedhili, A. Aljarb, 2023, ACS Materials Letters.

First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

I. Radu, H. Philip Wong, C. Chien, 2022, International Electron Devices Meeting.

In Situ Atomic-Scale Observation of Monolayer MoS2 Devices under High-Voltage Biasing via Transmission Electron Microscopy.

Wenshuo Wu, Li‐Syuan Lu, Y. Tseng, 2022, Small.