J. Wang

A simulation study of high voltage 4H-SiC IGBTs

B. Williams, J. Wang, 1998 .

Modeling of parasitic elements in high voltage multiplier modules

J. Wang, J. Wang, 2014 .

A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module

D. Boroyevich, R. Burgos, J. Wang, 2017, 2017 IEEE Electric Ship Technologies Symposium (ESTS).

Design of a two-switch flyback power supply using 1.7 kV SiC devices for ultra-wide input-voltage range applications

D. Boroyevich, L. Zarri, R. Burgos, 2016, 2016 IEEE Energy Conversion Congress and Exposition (ECCE).

The 4H-SiC npn power bipolar junction transistor

B. Williams, J. Wang, 1999 .