Yusuke Kawaguchi

High voltage BiCDMOS technology on bonded 2 /spl mu/m SOI integrating vertical npn pnp, 60 V-LDMOS and MPU, capable of 200/spl deg/C operation

Yoshihiro Yamaguchi, Akio Nakagawa, Hideyuki Funaki, 1995, Proceedings of International Electron Devices Meeting.

Silicon limit electrical characteristics of power devices and Ics

Yusuke Kawaguchi, A. Nakagawa, K. Nakamura, 2008 .

Non-destructive current measurement for surface mounted power MOSFET on VRM board using magnetic field probing technique

Ichiro Omura, Yoshihiro Yamaguchi, Yoshiko Ikeda, 2009, ISPSD 2009.