E. Kaminsky

Bulk GaN crystal growth by the high-pressure ammonothermal method

R. Molnar, E. B. Kaminsky, R. Melkote, 2006 .

Cathodoluminescence mapping and selective etching of defects in bulk GaN

Hai Lu, Huicong Hong, S. D. Arthur, 2006 .

Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

Lester F. Eastman, V. Tilak, A. P. Zhang, 2003 .

9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias

A. F. Allen, James W. Kretchmer, B. J. Edward, 2003 .

Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers

R. Melkote, F. Shahedipour-Sandvik, V. Jindal, 2007 .

Microwave power SiC MESFETs and GaN HEMTs

A. P. Zhang, J. Garrett, J. Kretchmer, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.