D. Caimi

发表

Record High Pockels Coefficient in PIC-Compatible BaTiO3/Si Photonic Devices

L. Zimmermann, F. Eltes, J. E. Ortmann, 2018, 2018 European Conference on Optical Communication (ECOC).

Non-Volatile Photonic Weights and their Impact on Photonic Reservoir Computing Systems

B. J. Offrein, F. Eltes, D. Caimi, 2019, 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).

Novel CMOS-Compatible Ultralow Capacitance Hybrid IlI-V/Si Photodetectors Tested up to 32 Gbps NRZ

B. J. Offrein, J. Faist, D. Caimi, 2019, 2019 Optical Fiber Communications Conference and Exhibition (OFC).

Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs

P. Hashemi, D. Caimi, L. Czornomaz, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Self-aligned S/D regions for InGaAs MOSFETs

D. Caimi, L. Czornomaz, J. Fompeyrine, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch

D. Caimi, L. Czornomaz, J. Fompeyrine, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

III–V heterostructure-on-insulator for strain studies in n-InGaAs channels

D. Caimi, L. Czornomaz, J. Fompeyrine, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

A novel 25 Gbps electro-optic Pockels modulator integrated on an advanced Si photonic platform

G. Winzer, L. Zimmermann, D. Petousi, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

First demonstration of 3D SRAM through 3D monolithic integration of InGaAs n-FinFETs on FDSOI Si CMOS with inter-layer contacts

M. Vinet, H. Hahn, J. Widiez, 2017, 2017 Symposium on VLSI Technology.

Monolithic integration of InAlAs/InGaAs quantum-well on InP-OI micro-substrates on Si for infrared light sources

D. Caimi, L. Czornomaz, Y. Baumgartner, 2017, 2017 IEEE 14th International Conference on Group IV Photonics (GFP).

An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling

D. Caimi, L. Czornomaz, J. Fompeyrine, 2012, 2012 International Electron Devices Meeting.

Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates

D. Caimi, L. Czornomaz, J. Fompeyrine, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Co-integrating high mobility channels for future CMOS, from substrate to circuits

D. Caimi, L. Czornomaz, J. Fompeyrine, 2014, 26th International Conference on Indium Phosphide and Related Materials (IPRM).

Towards electro-optical integration of hybrid III-V on Si lasers into the BEOL of a CMOS technology

H. Hahn, B. J. Offrein, D. Caimi, 2017, 2017 75th Annual Device Research Conference (DRC).

First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability

J. Barreto, F. Eltes, D. Caimi, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI

D. Caimi, L. Czornomaz, J. Fompeyrine, 2012, 70th Device Research Conference.

Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates

K. Cheng, D. Caimi, L. Czornomaz, 2013, 2013 IEEE International Electron Devices Meeting.

A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance

H. Hahn, P. Palestri, L. Selmi, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).