A. S. Yusof

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Z. Hassan, N. Fressengeas, W. F. Lim, 2021, Microelectronics International.

Analysis using a two-layer model of the transport properties of InGaN epilayers grown on GaN template substrate

Z. Hassan, N. Fressengeas, W. F. Lim, 2022, Materials Science in Semiconductor Processing.