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X.D. Chen
发表
Identities of the Deep Level Defects E1/E2 in 6H Silicon Carbide
C. Ling, S. Fung, M. Gong, 2004 .
Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States
S. Dhar, L. Feldman, J. Rozen, 2010 .