Noah Zamdmer

发表

Design of a high performance PD SOI for the 0.18 /spl mu/m technology generation

Werner A. Rausch, Fariborz Assaderaghi, Ghavam G. Shahidi, 2000, ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453).

A 4-91 GHz Distributed Amplifier in a Standard 0.12 pm SO1 CMOS Microprocessor Technology

Jean-Olivier Plouchart, Liang-Hung Lu, Jonghae Kim, 2003 .

Application of an SOI 0.12-µm CMOS technology to SoCs with low-power and high-frequency circuits

Suhwan Kim, Keith A. Jenkins, Jean-Olivier Plouchart, 2003, IBM J. Res. Dev..

SOI FinFET nFET-to-pFET Tracking Variability Compact Modeling and Impact on Latch Timing

Jim Johnson, Ning Lu, Jie Deng, 2015, IEEE Transactions on Electron Devices.

Design of wide-band CMOS VCO for multiband wireless LAN applications

Jean-Olivier Plouchart, Duixian Liu, Calvin Plett, 2003, IEEE J. Solid State Circuits.

A 0.123 mW 7.25 GHz static frequency divider by 8 in a 120-nm SOI technology

Yue Tan, Jean-Olivier Plouchart, Jonghae Kim, 2003, ISLPED '03.

A partially-depleted SOI compact model - formulation and parameter extraction

S.K.H. Fung, Fariborz Assaderaghi, Lawrence F. Wagner, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).

Performance-based metrology of critical device performance parameters for in-line non-contact high-density intra-die monitor/control on a 32nm SOI advanced logic product platform

Xiaojun Yu, Mario M. Pelella, Subramanian S. Iyer, 2013, Advanced Lithography.

Frequency-independent equivalent-circuit model for on-chip spiral inductors

Yu Cao, Chenming Hu, Xuejue Huang, 2003 .

A power-optimized widely-tunable 5-GHz monolithic VCO in a digital SOI CMOS technology on high resistivity substrate

Yue Tan, Jean-Olivier Plouchart, Jonghae Kim, 2003, ISLPED '03.

Design and manufacturability aspect of SOI CMOS RFICs

Jean-Olivier Plouchart, Jonghae Kim, Noah Zamdmer, 2004, Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571).

A power-efficient 33 GHz 2:1 static frequency divider in 0.12-/spl mu/m SOI CMOS

Jean-Olivier Plouchart, Jonghae Kim, Yue Tan, 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

Device-design metrics to improve manufacturability

Anda Mocuta, Xiaojun Yu, Ken Rim, 2010, 2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

The design and testing of integrated circuits for submillimeter-wave spectroscopy

Noah Zamdmer, 1999 .

Hot-electron degradation of bipolar transistors

Noah Zamdmer, 1994 .

Controlling floating-body effects for 0.13 /spl mu/m and 0.10 /spl mu/m SOI CMOS

Rajiv V. Joshi, Ching-Te Chuang, P. Oldiges, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Phase noise improvement of deep submicron low–voltage VCO

Duixian Liu, Calvin Plett, N. Fong, 2002 .

A 4-91 GHz distributed amplifier in a standard 0.12 /spl mu/m SOI CMOS microprocessor technology

Liang-Hung Lu, Jonghae Kim, Lawrence F. Wagner, 2003, Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003..

Amplifier in a 0.12µm SOI CMOS

Jean-Olivier Plouchart, Jonghae Kim, Robert A. Groves, 2004 .

SOI CMOS SoC Technology With Low-Power mmWave Digital and RF Circuit Capability

Jean-Olivier Plouchart, Jonghae Kim, Lawrence F. Wagner, 2005 .

A 4-91-GHz Traveling-Wave Amplifier in a Standard 0.12- m SOI CMOS Microprocessor Technology

Jean-Olivier Plouchart, Liang-Hung Lu, Jonghae Kim, 2004 .