S. Koyama

Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (110) Si

N. Taoka, M. Takenaka, S. Takagi, 2013 .

A Novel Characterization Scheme of $\hbox{Si/SiO}_{2}$ Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

M. Takenaka, S. Takagi, Yi Zhao, 2010, IEEE Transactions on Electron Devices.