Takuto Izawa

Influence of the facet trace region in 4H-SiC substrate on the glide and propagation behaviors of basal plane dislocations in 4H-SiC homoepitaxial layers

N. Ohtani, S. Morita, Takuto Izawa, 2021, Journal of Applied Physics.

Populations and propagation behaviors of pure and mixed threading screw dislocations in physical vapor transport grown 4H-SiC crystals investigated using X-ray topography

N. Ohtani, N. Shinagawa, Takuto Izawa, 2020, Japanese Journal of Applied Physics.

Structural characterization of the grown crystal/seed interface of physical vapor transport grown 4H-SiC crystals using Raman microscopy and x-ray topography

N. Ohtani, Kentaro Shioura, N. Shinagawa, 2019, Journal of Crystal Growth.