R. L. Hengehold

Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC

William C. Mitchel, W. Mitchel, R. Hengehold, 2001 .

Electrical and optical characterization studies of lower dose Si-implanted AlxGa1−xN

M. Marciniak, Mee-Yi Ryu, Y. Yeo, 2006 .

Electrical Activation Studies of Silicon-Implanted AlxGa1−xN with Aluminum Mole Fraction of 11% to 51%

Mee-Yi Ryu, Y. Yeo, R. Hengehold, 2011 .

Temperature-Dependent Studies of Si-Implanted Al0.33Ga0.67N with Different Annealing Temperatures and Times

Mee-Yi Ryu, Y. Yeo, R. Hengehold, 2010 .

Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted AlxGa1−xN with High Aluminum Mole Fraction

Mee-Yi Ryu, Y. Yeo, R. Hengehold, 2009 .

Electrical and optical activation studies of Si-implanted GaN

Mee-Yi Ryu, Y. Yeo, R. Hengehold, 2005 .