S. Mochizuki

Crystal Growth of High‐Quality AlInN/GaN Superlattices and of Crack‐Free AlN on GaN: Their Possibility of High Electron Mobility Transistor

H. Amano, I. Akasaki, Tetsuya Nakamura, 2001 .

Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates

S. Kamiyama, S. Fuke, H. Amano, 2003 .

Growth Mechanism and Characterization of Low-Dislocation-Density AlGaN Single Crystals Grown on Periodically Grooved Substrates

Theeradetch Detchprohm, Satoshi Kamiyama, Isamu Akasaki, 2001 .

Crystalline and Electrical Properties of AlInN/GaN and AlN/GaN superlattices on GaN Grown by Metalorganic Vapor Phase Epitaxy

S. Kamiyama, H. Amano, I. Akasaki, 2001 .

Reduction of threading dislocation density in AlXGa1−XN grown on periodically grooved substrates

H. Amano, I. Akasaki, Tetsuya Nakamura, 2002 .

MOVPE growth and characterization of Al1−xInxN/GaN multiple layers

H. Amano, I. Akasaki, Tetsuya Nakamura, 2002 .