I. Kashima

发表

MC simulation of ultrafast transistor using ballistic electron in intrinsic semiconductor and its fabrication feasibility

Y. Miyamoto, K. Furuya, N. Machida, 2006 .

Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias

Y. Miyamoto, K. Furuya, A. Suwa, 2007 .

Increase in current density at 25-nm-wide emitter for InP hot-electron transistors without base layer

Y. Miyamoto, K. Furuya, A. Suwa, 2006, 2006 64th Device Research Conference.