Gerhard Knoblinger

发表

Design of UWB LNA in 45nm CMOS technology: Planar bulk vs. FinFET

Luca Selmi, Marc Tiebout, Pierpaolo Palestri, 2008, 2008 IEEE International Symposium on Circuits and Systems.

Analysis and design of power and efficiency in third-order matching networks for switched-capacitor power-amplifiers

Andrea Bevilacqua, Antonio Passamani, Davide Ponton, 2016 .

Circuit design issues in multi-gate FET CMOS technologies

Charvaka Duvvury, Harald Gossner, Christian Russ, 2006, 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.

A 28nm Low-Voltage Digital Power-Amplifier for QAM-256 WIFI Applications in 0.5mm2 Area w/ 2D Digital-Pre-Distortion and Package Combiner

Andrea Bevilacqua, Andreas Wolter, Antonio Passamani, 2018, 2018 25th IEEE International Conference on Electronics, Circuits and Systems (ICECS).

A linear model of efficiency for Switched-Capacitor RF Power-Amplifiers

Andrea Bevilacqua, Antonio Passamani, Davide Ponton, 2014, 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME).

Analysis and design of a 1.1dB-IL third-order Matching Network for Switched-Capacitor PAs

Andrea Bevilacqua, Antonio Passamani, Davide Ponton, 2015, 2015 Nordic Circuits and Systems Conference (NORCAS): NORCHIP & International Symposium on System-on-Chip (SoC).

13.9 A 1.1V 28.6dBm fully integrated digital power amplifier for mobile and wireless applications in 28nm CMOS technology with 35% PAE

Andrea Bevilacqua, Andrea Neviani, Edwin Thaller, 2017, 2017 IEEE International Solid-State Circuits Conference (ISSCC).

Advances in Multi-Gate MOSFET Circuit Design

Doris Schmitt-Landsiedel, Christian Russ, Michael Fulde, 2007, 2007 14th IEEE International Conference on Electronics, Circuits and Systems.

A 5.9-to-7.8 GHz VCO in 65 nm CMOS using high-Q inductor in an embedded Wafer Level BGA package

Vadim Issakov, Maciej Wojnowski, Grit Sommer, 2011, 2011 IEEE MTT-S International Microwave Symposium.

SUB-45nm Technology and Design Challenges

James Tschanz, Gerhard Knoblinger, Marcal Pol, 2007, 8th International Symposium on Quality Electronic Design (ISQED'07).

Design of Low-Voltage Bandgap Reference Circuits in Multi-Gate CMOS Technologies

Doris Schmitt-Landsiedel, Martin Wirnshofer, Gerhard Knoblinger, 2009, 2009 IEEE International Symposium on Circuits and Systems.

Dielectric absorption of low-k materials: extraction, modelling and influence on SAR ADCs

Dieter Draxelmayr, Gerhard Knoblinger, Michael Kropfitsch, 2006, 2006 IEEE International Symposium on Circuits and Systems.

A merged MuGFET and planar SOI process

Andrew Marshall, Thomas Schulz, Christian Russ, 2007, 2007 IEEE International SOC Conference.

Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

Luca Selmi, Marc Tiebout, Pierpaolo Palestri, 2009, IEEE Transactions on Circuits and Systems I: Regular Papers.

Switched state-space model for a switched-capacitor power amplifier

Mario Huemer, Stefan Trampitsch, Gerhard Knoblinger, 2015, 2015 IEEE International Symposium on Circuits and Systems (ISCAS).

LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology

Marc Tiebout, Pierpaolo Palestri, Michael Fulde, 2011, IEEE Transactions on Circuits and Systems II: Express Briefs.

Multi-Gate MOSFET Design

Gerhard Knoblinger, 2006, 2006 Proceedings of the 32nd European Solid-State Circuits Conference.

A 12-b 16-GS/s RF-Sampling Capacitive DAC for Multi-Band Soft Radio Base-Station Applications With On-Chip Transmission-Line Matching Network in 16-nm FinFET

Kamran Azadet, Daniel Gruber, Martin Clara, 2021, IEEE Journal of Solid-State Circuits.