Cheng Wei

发表

Ultra high-speed InP/InGaAs DHBTs with ft of 203 GHz

Jin Zhi, Su Yongbo, Liu Xinyu, 2009 .

Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz

L. Xinyu, Jin Zhi, Su Yongbo, 2009 .

High-speed InGaAs/InP double heterostructure bipolar transistor with high breakdown voltage

L. Xinyu, Jin Zhi, Su Yongbo, 2008 .

An InGaAs/InP 40 GHz CML static frequency divider

Jin Zhi, Ge Ji, Su Yongbo, 2011 .

A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect

Jin Zhi, Ge Ji, Su Yongbo, 2009 .

High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax = 256 GHz and BVCEO = 8.3 V

Chen Chen, Zhao Yan, Cheng Wei, 2012 .

A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique

Jin Zhi, Ge Ji, Su Yongbo, 2009 .

High Current Multi-finger InGaAs/InP Double Heterojunction Bipolar Transistor with the Maximum Oscillation Frequency 253 GHz

L. Xinyu, Jin Zhi, Su Yongbo, 2008 .