M. Zíková

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

J. Oswald, P. Komninou, A. Hospodková, 2014 .

Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

J. Oswald, P. Komninou, A. Hospodková, 2019, Journal of Crystal Growth.

MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm

J. Oswald, P. Komninou, A. Hospodková, 2015 .