J. Singhal

发表

The new nitrides: layered, ferroelectric, magnetic, metallic and superconducting nitrides to boost the GaN photonics and electronics eco-system

Yongjin Cho, Zexuan Zhang, D. Jena, 2019, Japanese Journal of Applied Physics.

Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures

D. Jena, H. Xing, V. Protasenko, 2022, APL Materials.

Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques

D. Ralph, Zexuan Zhang, D. Jena, 2019, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure

S. Chakrabarti, A. Balgarkashi, S. Sengupta, 2017 .

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

D. Jena, H. Xing, O. Brandt, 2023, 2305.10542.

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Zexuan Zhang, D. Jena, H. Xing, 2023, Applied Physics Letters.

Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

Zexuan Zhang, D. Jena, H. Xing, 2022, Science advances.

Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates

Zexuan Zhang, D. Jena, H. Xing, 2022, AIP Advances.

Photo-induced electronic properties in single quantum well system: effect of excitonic lifetime

S. Chakrabarti, S. Pal, Samim Sardar, 2017 .

Unified ballistic transport relation for anisotropic dispersions and generalized dimensions

D. Jena, J. Singhal, 2020, 2007.10186.

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

Zexuan Zhang, D. Jena, H. Xing, 2022, Applied Physics Letters.

Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates

Zexuan Zhang, D. Jena, H. Xing, 2023, Applied Physics Letters.

In Situ Crystalline AlN Passivation for Reduced RF Dispersion in Strained‐Channel AlN/GaN/AlN High‐Electron‐Mobility Transistors

D. Jena, H. Xing, J. Casamento, 2021, physica status solidi (a).

A detailed investigation of strain patterning effect on bilayer InAs/GaAs quantum dot with varying GaAs barrier thickness

Subhananda Chakrabarti, Debiprasad Panda, Navneet Sehara, 2016, SPIE OPTO.

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

D. Jena, H. Xing, O. Brandt, 2023, APL Materials.

Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam Epitaxy

Yongjin Cho, Zexuan Zhang, D. Jena, 2022, IEEE Transactions on Magnetics.