B. Łucznik

InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE

Z. Wasilewski, J. Smalc-Koziorowska, C. Skierbiszewski, 2009 .

CFD and reaction computational analysis of the growth of GaN by HVPE method

M. Boćkowski, I. Grzegory, S. Krukowski, 2006 .

Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods

Izabella Grzegory, Sylwester Porowski, M. Boćkowski, 2007 .