Joel M. Fastenau

发表

High performance 1.3µm InAs quantum dot lasers epitaxially grown on silicon

John E. Bowers, Alan Y. Liu, Arthur C. Gossard, 2014, OFC.

MBE growth of Sb-based bulk nBn infrared photodetector structures on 6-inch GaSb substrates

Brian J. Smith, Dmitri Lubyshev, Mark J. Furlong, 2015, Defense + Security Symposium.

Manufacturable MBE growth process for Sb-based photodetector materials on large diameter substrates

Dmitri Lubyshev, Yueming Qiu, Joel M. Fastenau, 2012, OPTO.

Study of the valence band offsets between InAs and InAs1-xSbx alloys

Dmitri Lubyshev, Yueming Qiu, Elizabeth H. Steenbergen, 2012, OPTO.

Temperature-dependent minority carrier lifetime in InAsSb nBn detectors on alternative substrates

Sanjay Krishna, Dmitri Lubyshev, Joel M. Fastenau, 2019, Optical Engineering + Applications.

100mm GaSb substrate manufacturing for IRFPA epi growth

L. P. Allen, Dmitri Lubyshev, Yueming Qiu, 2012, Defense + Commercial Sensing.

Epitaxy ready 4" GaSb substrates: requirements for MBE grown type-II superlattice infrared detectors

Xing Gu, Mark J. Furlong, Joel M. Fastenau, 2010, Defense + Commercial Sensing.

Large-format multi-wafer production of 5" GaSb-based photodetectors by molecular beam epitaxy

Michael Kattner, Phillip Frey, Mark J. Furlong, 2017, Defense + Security.

Development of interband cascade infrared photodetectors

Rui Q. Yang, Matthew B. Johnson, John F. Klem, 2011, Defense + Commercial Sensing.

MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates

Dmitri Lubyshev, Yueming Qiu, Christiana Honsberg, 2013, Defense, Security, and Sensing.

High-temperature operation of interband cascade infrared photodetectors with cutoff wavelengths near 8 μm

Rui Q. Yang, Joel C. Keay, Matthew B. Johnson, 2015 .

Postgrowth wavelength engineering of InAs/InAlGaAs/InP quantum-dash-in-well lasers

Boon S. Ooi, Ying Wu, Hery Susanto Djie, 2007, SPIE OPTO.

Multiwafer production of epitaxy-ready 4" GaSb: substrate performance assessments pre- and post-epitaxial growth

Dmitri Lubyshev, Mark J. Furlong, Brian J. Smith, 2013, Defense, Security, and Sensing.

A study of the preparation of epitaxy-ready polished surfaces of (100) Gallium Antimonide substrates demonstrating ultra-low surface defects for MBE growth

Dmitri Lubyshev, Mark J. Furlong, Patrick Flint, 2016, SPIE Defense + Security.

Long-wavelength interband cascade infrared photodetectors operating above room temperature

Rui Q. Yang, Joel C. Keay, Matthew B. Johnson, 2015, SPIE OPTO.

Indium Phosphide Heterobipolar Transistor Technology Beyond 1-THz Bandwidth

Mark J. W. Rodwell, Vibhor Jain, Miguel Urteaga, 2015, IEEE Transactions on Electron Devices.

An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

Mark J. W. Rodwell, Vibhor Jain, Miguel Urteaga, 2015, IEEE Journal of the Electron Devices Society.

Direct MBE growth of metamorphic nBn infrared photodetectors on 150 mm Ge-Si substrates for heterogeneous integration

Scott A. Nelson, Dmitri Lubyshev, Michael Kattner, 2019, Journal of Vacuum Science & Technology B.

Monolithic integration of InP-based transistors on Si substrates using MBE

T. E. Kazior, Bobby Brar, Dmitri Lubyshev, 2009 .

MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon

John E. Bowers, Arthur C. Gossard, Dmitri Lubyshev, 2014 .

InGaAs/InP DHBTs with emitter and base defined through electron‐beam lithography for reduced Ccb and increased RF cut‐off frequency

Mark J. W. Rodwell, Brian Thibeault, Vibhor Jain, 2013 .

Bulk InAsxSb1-x nBn photodetectors with greater than 5μm cutoff on GaSb

Sumith V. Bandara, Meimei Z. Tidrow, Dmitri Lubyshev, 2016 .

Detection wavelength of InGaAs/AlGaAs quantum wells and superlattices

Kwong-Kit Choi, Sarath D. Gunapala, Sumith V. Bandara, 2002 .

Intermixing of InGaAs quantum dots grown by cycled monolayer deposition

Boon S. Ooi, Hery Susanto Djie, James C. M. Hwang, 2006 .

Effect of substrate orientation on Sb-based MWIR photodetector characteristics

Scott A. Nelson, Dmitri Lubyshev, Patrick Flint, 2018, Infrared Physics & Technology.

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Suman Datta, Mantu K. Hudait, Dmitri Lubyshev, 2012 .

Interband cascade infrared photodetectors with enhanced electron barriers and p-type superlattice absorbers

Rui Q. Yang, Robert T. Hinkey, Zhaobing Tian, 2012 .

MBE growth of GaSb-based photodetectors on 6-inch diameter GaAs substrates via select buffers

Dmitri Lubyshev, Yueming Qiu, Joel M. Fastenau, 2013 .

High performance continuous wave 1.3 μm quantum dot lasers on silicon

John E. Bowers, Arthur C. Gossard, Dmitri Lubyshev, 2014 .

Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications

Dmitri Lubyshev, Sara Bals, Joel M. Fastenau, 2004 .

Tuning and tailoring of broadband quantum-well infrared photodetector responsivity spectrum

Sir B. Rafol, Jason M. Mumolo, Sarath D. Gunapala, 2005 .