S. Baek

Effect of a Mo Interlayer on the Electrical Properties of Ni-Silicided n + ∕ p Diode and n + Poly-Si Gate Electrode

T. Seong, Y. Ok, Donghwan Kim, 2007 .

Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3

H. Hwang, S. Nam, H. Chang, 2004 .

Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices

H. Hwang, Y. Son, H. Lim, 2005 .