Naofumi Sakai

Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma

H. Nakashima, D. Gao, K. Muraoka, 1999 .

Study of the effects of discharge conditions and substrate temperature on Si epitaxial deposition using sputtering-type electron cyclotron resonance plasma

H. Nakashima, D. Gao, K. Muraoka, 2000 .