F. Roumanille

Growth of Ga1−xAlxSb and Ga1−xInxSb by organometallic chemical vapor deposition

A. Foucaran, G. Bougnot, J. Bougnot, 1986 .

Metal Organic Chemical Vapor Deposition (MOCVD) Growth Of Ga1-XInxAsySb1-y : First Electrical And Optical Characterization Of Materials And Devices

Leone Gouskov, Philippe Grosse, Georges Bougnot, 1987, Other Conferences.

Growth of GaInAsSb Alloys by MOCVD and Characterization of GaInAsSb / GaSb p‐n Photodiodes

P. Grosse, G. Bougnot, A. Foucaran, 1988 .