Prashant Majhi

发表

The Challenges in Introducing PMOS Dual Channel in CMOS Processing

Seung Chul Song, Paul Kirsch, H. R. Harris, 2009 .

HFinFET: A Scalable, High Performance, Low Leakage Hybrid n-Channel FET

Navakanta Bhat, Raj Jammy, Prashant Majhi, 2010, IEEE Transactions on Nanotechnology.

Review of alternative gate stack technology research during the last decade

Hsing-Huang Tseng, Byoung Hun Lee, Raj Jammy, 2006 .

Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO2 for the Advanced Gate Stack

Stefan De Gendt, John S. Suehle, Ichiro Takeuchi, 2008 .

In0.53Ga0.47As based metal oxide semiconductor capacitors with atomic layer deposition ZrO2 gate oxide demonstrating low gate leakage current and equivalent oxide thickness less than 1nm

S. Koveshnikov, Vadim Tokranov, Serge Oktyabrsky, 2008 .

InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

James S. Harris, Chi On Chui, Donghun Choi, 2006 .

Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing.

Ali Javey, Prashant Majhi, Roie Yerushalmi, 2009, Nano letters.

Suppression of Nickel-germanide (NiGe) Agglomeration and NiPenetration by Hydrogen (H) Ion Shower Doping in NiGe on a ThinEpitaxial Ge-on-Si Substrate

Raj Jammy, Ga-Won Lee, Min-Ho Kang, 2009 .

Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning

Husam N. Alshareef, Muhammad Mustafa Hussain, Gennadi Bersuker, 2008 .

Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si Cap and high-k metal gate stacks

Raj Jammy, Y. Akasaka, T. Arikado, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Sub-60nm Si tunnel field effect transistors with Ion >100 µA/µm

Chang Yong Kang, Hsing-Huang Tseng, Raj Jammy, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

High Mobility SiGe Channel pMOSFETs Epitaxially Grown on Si (100) Substrates with HfSiO 2 High-k Dielectric and Metal Gate

Raj Jammy, Takuya Sugawara, Prashant Majhi, 2008 .

on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained $ \hbox{Si}_{0.5}\hbox{Ge}_{0.5}$ Quantum-Well pMOSFET Along $ \langle \hbox{110} \rangle$ and $\langle \hbox{100} \rangle$ Channel Directions

Leonard Franklin Register, Raj Jammy, Aneesh Nainani, 2011, IEEE Transactions on Electron Devices.

CMOS Scaling Beyond High-k and Metal Gates

Raj Jammy, Prashant Majhi, Jungwoo Oh, 2007 .

High mobility SiGe shell-Si core omega gate pFETS

Ji-Woon Yang, Raj Jammy, Bich-Yen Nguyen, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Effective work function of Pt, Pd, and Re on atomic layer deposited HfO2

Sandwip Dey, Prashant Majhi, P. Majhi, 2006 .

Thermal Immune Ni Germanide for High Performance Ge MOSFETs on Ge -on- Si Substrate Utilizing $ \hbox{Ni}_{0.95}\hbox{Pd}_{0.05}$ Alloy

Won-Ho Choi, R. Jammy, Zhun Zhong, 2009 .

on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained Quantum-Well pMOSFET Along and Channel Directions

Raj Jammy, Aneesh Nainani, Prashant Majhi, 2011 .

Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance $\hbox{Si}_{1 - x}\hbox{Ge}_{x}$ pMOSFETs With High-$k$/Metal Gate Stacks

Raj Jammy, Ga-Won Lee, Won-Ho Choi, 2010, IEEE Electron Device Letters.

The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)

Hsing-Huang Tseng, Raj Jammy, Gennadi Bersuker, 2009 .

Effective work function modification of atomic-layer-deposited-TaN film by capping layer

Husam N. Alshareef, Kisik Choi, Byoung Hun Lee, 2006 .

Integration of dual metal gate CMOS on high-k dielectrics utilizing a metal wet etch process

Husam N. Alshareef, Byoung Hun Lee, Muhammad M. Hussain, 2005 .

High Mobility SiGe p-Channel Metal?Oxide?Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-k Dielectric and Metal Gate

Chang Yong Kang, Raj Jammy, Takuya Sugawara, 2009 .

Work function engineering using lanthanum oxide interfacial layers

Husam N. Alshareef, Byoung Hun Lee, Raj Jammy, 2006 .

Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes

Howard R. Huff, Byoung Hun Lee, G. Bersuker, 2005 .