Anindya Nath

发表

(Invited) Vertical GaN Devices Enabled By Selective Area P-Type Doping

Alan G. Jacobs, Francis J. Kub, Travis J Anderson, 2017 .

Progress in the Resolution of Materials Challenges for High-Voltage SiC Power Devices

Charles R. Eddy, Anindya Nath, Nadeemullah A. Mahadik, 2013 .

Graphene growth on SiC(000-1): optimization of surface preparation and growth conditions

D. K. Gaskill, Charles R. Eddy, Nelson Y. Garces, 2015, SPIE NanoScience + Engineering.

Mechanical Exfoliation of Large Area (100) β-Ga 2 O 3 Onto Arbitrary Substrates for High Power Devices

Travis J Anderson, Karl D. Hobart, Michael A. Mastro, 2017 .

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Daniel Piedra, Xiang Gao, Tomás Palacios, 2017, IEEE Electron Device Letters.

Challenges to graphene growth on SiC(0 0 0 1‾): Substrate effects, hydrogen etching and growth ambient

M. V. Rao, Jennifer K. Hite, Charles R. Eddy, 2015 .