Akihiro Hashimoto

发表

EXPELIMENTAL STUDY ON THE ABILITY TO INDUCE A UNIDERECTIONAL FLOW BY A PIPE WITH A FLANGE

Toshimitsu Komatsu, Akihiro Hashimoto, Tomoya Matsushita, 2011 .

Recent advances in InN‐based solar cells: status and challenges in InGaN and InAlN solar cells

Md. Rafiqul Islam, Akio Yamamoto, Akihiro Hashimoto, 2010 .

Band Gap of Hexagonal InN and InGaN Alloys

Akio Yamamoto, Hiroshi Harima, D. A. Kurdyukov, 2002 .

Polarized microscopic laser Raman scattering spectroscopy for edge structure of epitaxial graphene and localized vibrational mode

Takayuki Makino, Akihiro Hashimoto, Satoru Tanaka, 2014 .

MOVPE growth of Inx Ga1‐xN (x ∼0.5) on Si(111) substrates with a pn junction on the surface

Akio Yamamoto, Naoteru Shigekawa, Noriyuki Watanabe, 2013 .

Indium nitride (InN): A review on growth, characterization, and properties

Akio Yamamoto, Ashraful G. Bhuiyan, Akihiro Hashimoto, 2003 .

MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content

Akio Yamamoto, Naoteru Shigekawa, Noriyuki Watanabe, 2012 .

InGaN Solar Cells: Present State of the Art and Important Challenges

Akio Yamamoto, Ashraful Ghani Bhuiyan, Akihiro Hashimoto, 2012, IEEE Journal of Photovoltaics.

MOVPE growth of high quality p-type InGaN with intermediate In compositions

Akio Yamamoto, Ashraful G. Bhuiyan, Akihiro Hashimoto, 2011 .

Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

Akio Yamamoto, Hiroshi Harima, Eugene E. Haller, 2002 .

The most possible donor in InN grown by metalorganic vapor-phase epitaxy

Akio Yamamoto, Akihiro Hashimoto, A. Yamamoto, 2006 .

AlInN/InN metal oxide semiconductor heterostructure field effect transistor

Md. Rafiqul Islam, Akio Yamamoto, Md. Tanvir Hasan, 2010 .