D. Batuk

Ru as an alternative material for advanced contacts

M. H. van der Veen, S. Demuynck, N. Horiguchi, 2020, 2020 IEEE International Interconnect Technology Conference (IITC).

Middle-of-line plasma dry etch challenges for CFET integration

H. Mertens, Z. Tao, N. Horiguchi, 2023, Advanced Lithography.

Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning

H. Mertens, A. Hikavyy, Z. Tao, 2023, 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

Semi-damascene Integration of a 2-layer MOL VHV Scaling Booster to Enable 4-track Standard Cells

D. Tsvetanova, N. Horiguchi, J. Ryckaert, 2022, International Electron Devices Meeting.

Integrating 8nm Self-Aligned Tip-to-Tip to Enable 4-track Standard Cell Architecture as Scaling Booster

V. V. Gonzalez, J. Ryckaert, N. Jourdan, 2023, 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM).

Integration of a Stacked Contact MOL for Monolithic CFET

O. Richard, N. Horiguchi, K. Vandersmissen, 2023, 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).