H. M. Deangelis

发表

Defects in electron‐irradiated, gallium‐doped silicon

P. Drevinsky, H. M. Deangelis, 1983 .

Capacitance transient spectra of processing- and radiation-induced defects in silicon solar cells

P. Drevinsky, J. Schott, H. M. Deangelis, 1980 .

On the role of defect charge state in the stability of point defects in silicon

Lionel C. Kimerling, L. Kimerling, H. M. DeAngelis, 1975 .

Annealing of Electron-Irradiated n-Type Silicon. I. Donor Concentration Dependence

L. Kimerling, H. M. Deangelis, C. Carnes, 1971 .

Radiation Annealing and Modification of the 35° and 65°K Defects in Germanium at Low Temperature

H. M. Deangelis, R. E. Penczer, 1968 .

Electron irradiation of heavily doped GaAs:Si and GaAs:Te

L. Bouthillette, A. Kahan, H. M. Deangelis, 1971 .

Defect behavior in electron-irradiated boron- and gallium-doped silicon

P. Drevinsky, H. M. Deangelis, 1982 .