P. A. Stolk

Flat band voltage shift and oxide properties after rapid thermal annealing

Paul K. Hurley, B. J. O'Sullivan, F. N. Cubaynes, 2001, Microelectron. Reliab..

Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion

P. A. Stolk, D. J. Eaglesham, P. Stolk, 1995 .

Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon

P. A. Stolk, D. J. Eaglesham, J. M. Poate, 1996 .

Implantation and transient B diffusion in Si: The source of the interstitials

P. A. Stolk, D. J. Eaglesham, P. Stolk, 1994 .

Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon

G. Krötz, P. A. Stolk, W. F. van der Weg, 1994 .